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Abstract : In this paper, we present results, we have obtained on GaSb-AlSb or AlSb-GaSb interfaces grown by MBE. We first focuss on the surface properties obtained by AES, R H E E D, work function topographies. Then, we describe the formation of the interface and the evolution of its properties during growth. We detail A E S and work function measurements and show Al migration at the GaSb-AlSb interface and no noticeable Ga diffusion at the AlSb-GaSb interface.





Autor: C. Raisin H. Tegmousse L. Lassabatere

Fuente: https://hal.archives-ouvertes.fr/



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