INTRINSIC VERSUS EXTRINSIC EFFECTS IN EXCITATION DYNAMICS IN GaAs-GaAlAs SUPERLATTICESReportar como inadecuado




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Abstract : We report studies of photoexcited carrier dynamics in GaAlAs-GaAs superlattices as a function of excitation power using optical technique. At low power, we observe a quadratic behavior of luminescence intensity, due to competition between electron-hole radiative recombination and trapping by defects. At higher power, a departure from this behavior is interpreted by a fast spatial expansion of the plasma. However, over the whole range, the measured decay time is mainly related to the trapping process.





Autor: D. Block B. Boulanger R. Romestain B. Deveaud B. Lambert A. Regreny

Fuente: https://hal.archives-ouvertes.fr/



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