HIGH VOLTAGE SWITCHING P-CHANNEL STRUCTURE FOR CMOS ARCHITECTURESReportar como inadecuado




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Abstract : An analysis of a P-ch High Voltage structure fully compatible with all CMOS architectures is presented. It points out the critical role played by drain extension layer on electrical device performance, and by the field thick oxide periphery on the device reliability. These results are useful in designing HV process compatible devices in advanced CMOS technology.





Autor: C. Mori G. Crisenza P. Picco

Fuente: https://hal.archives-ouvertes.fr/



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