NARROW CHANNEL EFFECT ON n- AND p-CHANNEL DEVICES FABRICATED WITH THE SILO AND BOX ISOLATION TECHNIQUESReportar como inadecuado




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Abstract : We have studied the narrow channel effect NCE on active devices fabricated with the SILO and BOX isolation techniques. The importance of the boron encroachment in the active region is shown, as well as the advantage of the BOX technique which uses a deposited oxide instead of a thermal oxide in the SILO process. With a low field implantation dose used to reduce the NCE, a double threshold effect in the subthreshold characteristic is inevitable.





Autor: J. Coppee E. Figueras B. Goffin D. Gloesener F. Van de Wiele

Fuente: https://hal.archives-ouvertes.fr/



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