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Abstract : The present tendency toward devices scaling in VLSI technology makes more and more difficult the electrical characterization of channel dimensions. The narrow channel effects have had a great consideration for what concern device modeling, but a minor attention about dimensional loss problems. The aim of this work is to propose an effective width characterization method based on transconductance and not affected by the typical problems related to narrow channel devices. Moreover, a compared analysis of this method to an other one previously proposed 1 is shown pointing out the phenomenological differences.





Autor: P. Caprara C. Bergonzoni T. Cavioni

Fuente: https://hal.archives-ouvertes.fr/



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