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This paper presents a study of amorphous SiOx thin films by means of Variable Angle Spectroscopic Ellipsometry VASE technique. Tauc Lorentz, Lorentz and Cauchy models have been used to obtain physical thickness and complex refractive index n and k from experimental data. In order to obtain a wide range to x stoichiometry values, the films were prepared by vacuum thermal evaporation of SiO on glass substrates, under different and controlled deposition conditions.

KEYWORDS

Ellipsometry, Refraction Index, SiOx Thin Films

Cite this paper

Salazar, D. , Soto-Molina, R. , Lizarraga-Medina, E. , Felix, M. , Radnev, N. and Márquez, H. 2016 Ellipsometric Study of SiOx Thin Films by Thermal Evaporation. Open Journal of Inorganic Chemistry, 6, 175-182. doi: 10.4236-ojic.2016.63013.





Autor: David Salazar1, Roberto Soto-Molina1, Eder German Lizarraga-Medina1, Marco Antonio Felix2, Nicola Radnev2, Heriberto Márquez1

Fuente: http://www.scirp.org/



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