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A modular andgeneric monolithic integrated MEMS process for integrating CMOS technology withpolysilicon microstructures is presented. The proposed process flow is designedwith an intra CMOS approach to fabricate the microstructures into trencheswithout the need of planarization techniques. After annealing at 1000°C atsignificant period of time, it is shown that Id-Vg characteristics ofthe CMOS transistors remain almost unchanged, indicating their robustness tothe intra process fabrication for the micromechanical structures. The CMOS moduleis designed with a 3 μm length as a minimum feature and this process resultswith a minimum of residual strain and stress on the micromechanical devices ε = 1.28 × 10-4 and σ = -21 MPa.

KEYWORDS

Thermal Annealing, CMOS, MEMS, Process Simulation, Surface Micromachining

Cite this paper

Álvarez, C. , Aranda, Á. , Jácome, A. , Moreno, M. , Reyes, J. , Islas, C. and Arriaga, W. 2016 A Generic MEMS Fabrication Process Based on a Thermal Budget Approach. Journal of Electronics Cooling and Thermal Control, 6, 97-107. doi: 10.4236-jectc.2016.62009.





Autor: Carlos Ramón Báez Álvarez, Álvarez, Mónico Linares Aranda, Alfonso Torres Jácome, Mario Moreno Moreno, Joel Molina Reyes, C

Fuente: http://www.scirp.org/



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