High-performance InGaZnO thin-film transistors with high-k amorphous Ba₀.₅Sr₀.TiO₃gate insulatorReportar como inadecuado


High-performance InGaZnO thin-film transistors with high-k amorphous Ba₀.₅Sr₀.TiO₃gate insulator


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We report on high-performance n-channel thin-film transistors TFTs fabricated using amorphous indium gallium zinc oxide a-IGZO and amorphous Ba₀.₅Sr₀.₅TiO₃ α-BST as the channel and gate dielectric layers, respectively. a-BST-a-IGZO TFTs achieve low-voltage operation with a high saturation mobility value of 10±1 cm²-V s, excellent subthreshold slopes of 0.06±0.01 V-decade, a low threshold voltage of 0.5±0.1 V, and a high on-off current ratio up to 8×10⁷ W-L = 1000 μm-5 μm at 3 V. The high capacitance density of a-BST 145±2 nF-cm² and the small contact resistance, smaller than the channel resistance, are responsible for the high performance of these TFTs.



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Autor: Kim, Jungbae - Fuentes-Hernandez, Canek - Kippelen, Bernard - -

Fuente: https://smartech.gatech.edu/







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