Low-voltage C-60 organic field-effect transistors with high mobility and low contact resistanceReportar como inadecuado


Low-voltage C-60 organic field-effect transistors with high mobility and low contact resistance


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State-of-the-art C60 organic transistors are reported here by engineering the essential electrode-semiconductor and dielectric-semiconductor interfaces. By using calcium Ca as the source and drain electrodes, the width-normalized contact resistance RCW at the electrode-semiconductor interface could be reduced to a constant value of 2 k Ω cm at a gate-source voltage V-GS of 2.6 V, for devices with channel lengths ranging from 25 to 200 µm. Channel transconductance is observed to follow channel length scaling, and charge mobility average value of 2.5 cm2-Vs at VGS < 5 V is found independent of channel length within the studied range.



COPE Publications -



Autor: Kippelen, Bernard - Zhang, Xiaohong - -

Fuente: https://smartech.gatech.edu/







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