Forecast of the Luminescent Phenomena of Silicon Rich Oxide Films off Stoichiometry by Means of the Global Reaction ModelReportar como inadecuado




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The Global Reaction Model describes a set of chemical reactions that can potentially occur during the process of obtaining silicon rich oxide SRO films, regardless of the technique used to grow such films which are an outside stoichiometry material. Particularly, chemical reactions that occur during the process of growing of SRO films by LPCVD technique are highlighted in this model. We suggest and evaluate either some types of molecules or resulting nanostructures and we predict theoretically, by applying the density functional theory, the contribution that they may have to the phenomenon of luminescence which is measured in SRO films. Also, we have calculated the opto-electronic properties of SRO films. The suggested model provides enough information required to identify the molecular structures resulting from the presence of defects in SRO films and also those corresponding to charged structures. It is also possible to detect the molecular structures which are modified due to the effect of heat treatment, and identify the presence of different oxidation states inclusive the formation of siloxanes.

KEYWORDS

Global Reactions Model, Silicon Rich-Oxide, Defects, LPCVD, Luminescence

Cite this paper

Espinosa-Torres, N. , Hernández de la Luz, J. , Flores-Gracia, J. , Luna-López, J. , Martínez-Juárez, J. and Flores-Carrasco, G. 2015 Forecast of the Luminescent Phenomena of Silicon Rich Oxide Films off Stoichiometry by Means of the Global Reaction Model. Journal of Modern Physics, 6, 1679-1694. doi: 10.4236-jmp.2015.611170.





Autor: Néstor David Espinosa-Torres1,2*, José Álvaro David Hernández de la Luz1, José Francisco Javier Flores-Gracia1, José Albert

Fuente: http://www.scirp.org/



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