Photoluminescence Properties of Thulium and Cerium Co-Doped Tantalum-Oxide Films Prepared by Radio-Frequency Co-SputteringReportar como inadecuado




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We prepared thulium and cerium co-doped tantalum-oxide Ta2O5 :Tm, Ce thin films by radiofrequencyco-sputtering of Tm2O3 and CeO2 pellets on a Ta2O5 disc for the first time, and photoluminescencePL properties of the films annealed at 700°C, 800°C, 900°C, or 1000°C for 20 min wereevaluated. PL peaks around a wavelength of 800 nm due to Tm3+ were observed for films annealedat 900°C or 1000°C. The peak intensities of films prepared using one Tm2O3 pellet and one CeO2 pellet were much stronger than those of films prepared using one Tm2O3 pellet and two CeO2 pelletsor films prepared using two Tm2O3 pellets and one CeO2 pellet. To obtain the strongest PL intensityfrom the film, the proper Tm concentration was estimated to be around 1.0 mol%, and theproper Ce concentration was estimated to be around 1.3 mol%. Such Ta2O5:Tm, Ce co-sputteredthin films can be used as high-refractive-index materials of autocloned photonic crystals that canbe applied to novel light-emitting devices, and they will also be used as anti-reflection and downconversionlayers for realizing high-efficiency silicon solar cells.

KEYWORDS

Tantalum Oxide, Thulium, Cerium, Co-Sputtering, Photoluminescence

Cite this paper

Miura, K. , Osawa, T. , Yokota, Y. , Suzuki, T. and Hanaizumi, O. 2015 Photoluminescence Properties of Thulium and Cerium Co-Doped Tantalum-Oxide Films Prepared by Radio-Frequency Co-Sputtering. Materials Sciences and Applications, 6, 263-268. doi: 10.4236-msa.2015.64031.





Autor: Kenta Miura*, Takumi Osawa, Yuya Yokota, Tetsuhito Suzuki, Osamu Hanaizumi

Fuente: http://www.scirp.org/



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