Large Room Temperature Magneto-Resistance in Magnetically Disordered Fe1.5Ti0.5O3-δ Thin FilmsReportar como inadecuado




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Electronictransport properties of magnetically disordered R-3c phase thin films epitaxially grown on Al2O30001substrates have been studied. The measured magnetization in configurations withthe magnetic field perpendicular and parallel to the film plane shows weakvalues of 0.1μB-formulacompared to the theoretical value of 2μB-formulaand a strong anisotropy with no saturation in perpendicular configuration.These properties are associated with the ato- mic scale disorder of Ti-Fe ionsalong c-axis. At zero-magnetic field and within the temperature range of 80 Kto 400 K, the conduction mechanism appears to be Efros-Shklovskii variablerange hopping with a carrier localization length of ξ0= . MR =



Autor: Ekaterine Chikoidze1, Yves Dumont1, Elena Popova1, Niels Keller1, Andrey Shumilin2, Veniamin Kozub2, Benedicte Warot-Fonrose3

Fuente: http://www.scirp.org/



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