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Abstract : A critical discussion of the experimental observations made on the EL2 defect in GaAs is made which allows us to conclude that the most probable configuration of this defect is the As antisite-As interstitial pair.

Keywords : deep levels electron traps gallium arsenide III V semiconductors interstitials point defects semiconductor EL2 defect As antisite As interstitial pair GaAs

Autor: J.C. Bourgoin M. Lannoo

Fuente: https://hal.archives-ouvertes.fr/


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