Role of oxygen in surface segregation of metal impurities in silicon poly-and bicrystalsReportar como inadecuado

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Abstract : Metal impurities at surfaces of polycrystalline silicon ribbons have been characterized by surface sensitive methods. Oxygen and heat treatments were found to be a driving force for surface segregation of these impurities. To better analyse their influence and their possible incidence in gettering, model studies were undertaken on Czochralski grown silicon bicrystals. Two main factors of surface segregation have been studied : the role of a ultra-thin oxide layer and the effect of heat treatments. The best surface purification was obtained after an annealing process at 750 °C of a previously oxidized surface at 450 °C. This was related to the formation of SiO clusters, followed by a coalescence of SiO4 units leading to the subsequent injection of silicon self-interstitials in the lattice.

Keywords : elemental semiconductors heat treatment impurities interstitials oxygen segregation silicon surface structure semiconductor polycrystals surface segregation metal impurities bicrystals ribbons surface sensitive methods heat treatments gettering ultra thin oxide layer surface purification SiO clusters coalescence self interstitials 750 degC Si:O

Autor: E. Amarray J.P. Deville



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