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Abstract : A physical model of the electron-beam-induced contrast EBIC of dislocations perpendicular to the surface is proposed.
The theory deals with the diffusion region of Schottky barriers perpendicular to the electron beam.
As the geometry investigated is such that the electron beam impinges directly above the dislocation line, the maximum value of the contrast is calculated.
The carrier recombination at the dislocation is introduced in the diffusion equation with the help of its self-consistent electric field which is permanent in a volume VD around the dislocation line ; therefore, we make the assumption that no diffusion of free carriers can occur inside VD and an infinite recombinaison rate is assigned to the surface limiting VD.
The resulting expression for the contrast is made of two terms ; the first corresponds to the usual expression for the contrast given in previous models ; the second originates in the modification of the carrier density brought by the dislocation.
It is shown that the latter contribution to the contrast is generally greater than the first one.
Numerical results indicate that intrinsic recombination at dislocations can lead to EBIC contrasts of a few percents as observed experimentally.


Keywords : EBIC electron hole recombination Schottky effect EBIC contrast theory dislocations intrinsic recombination properties physical model electron beam induced contrast diffusion region Schottky barriers carrier recombination diffusion equation self consistent electric field carrier density





Autor: J.L.
Farvacque B.
Sieber


Fuente: https://hal.archives-ouvertes.fr/



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