Electrical characterization of as-grown, annealed and indium-doped Hg1-xZnxTe for x near 0.15Reportar como inadecuado




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Abstract : Concentration and mobility of carriers in Hg1-xZnxTe for x near 0.15 are presented for as grown T.H.M.
material and after annealings under mercury pressure.
These concentrations and mobilities are near those found in Hg1-xCdxTe for a same band gap x = 0.22 .
However the mercury diffusion coefficient is lower, this involves difficulty to obtain homogeneous n-type samples through low temperature stoichiometric annealing but reveales a better stability of the material.
Indium is a donor dopant but with also a low diffusion coefficient ; moreover this doping strongly decreases the electron mobility.
Carrier mobility and intrinsic concentration can be well described with a Kane model for the conduction band.
This model leads to an estimation for the heavy hole effective mass of 0.6 m0.


Keywords : annealing diffusion in solids effective mass band structure II VI semiconductors indium mercury compounds self diffusion in solids semiconductor doping zinc compounds semiconductor carrier mobility carrier density THM annealings band gap diffusion coefficient stability doping electron mobility Kane model conduction band heavy hole effective mass Hg sub 1 x Zn sub x Te Hg sub 1 x Zn sub x Te:In





Autor: S.
Rolland A.
Lasbley A.
Seyni R.
Granger R.
Triboulet


Fuente: https://hal.archives-ouvertes.fr/





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