Based on Sol-Gel PZT Thin Film Technology of New Control Method of preferred orientationReportar como inadecuado




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In this paper, in Pt-Ti-Si02-Si Sol-Gel PZT film substrates, the systematic study of the Sol-Gel process of single-annealed film thickness on the PZT film morphology, phase structure, dielectric and iron electrical properties are discussed by changing the film thickness control of single-annealed PZT thin film growth of preferred orientation, get a new simple control method preferred orientation film, the effective control of residual stress in thin film preparation

KEYWORDS

PZT thin film, single-annealing, film thickness, preferred orientation, dielectric properties, ferroelectric properties

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Autor: Hongli Li, Huiqin Sun, Feng Li

Fuente: http://www.scirp.org/



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