Influence of the Growth Temperature of Si Buffer Layers on Ge Quantum DotsReport as inadecuate




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A series of Ge quantum dot samples were grown on Si100 substrates with a Si buffer layer by ion beam sputtering. The surface morphology and structure were studied with AFM and Raman spectra. The topography as well as the evolution of the size and density of Ge quantum dots was observed with changing the growth temperature of Si buffer layers. It is indicated that the topography of Ge quantum dots as well as their size and density could be controlled by the growth temperature of Si buffer layers. Consequently, Ge quantum dots with narrow size distribution and high density can be obtained by the ion beam sputtering technique. The effects of Si buffer layers which manipulate the growth and shape of the Ge quantum dots were well discussed.

KEYWORDS

Si buffer layer;Ge quantum dots;Ion beam sputtering

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Author: Hong-xing Pan, Chong Wang, Fei Xiong, Xue-gui Zhang, Jie Yang, Tian-xin Li

Source: http://www.scirp.org/



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