Study of a Compound Terminal Structure of 4H-SiC Merged PiN-Schottky DiodeReport as inadecuate




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Silicon Carbide has been widely used and researched in the fields of power devices due to its superior material properties, and merged PiN-Schottky MPS diode is an ideal rectifier. In this paper we study a 4H-SiC MPS diode with a compound terminal structure which is a combination of guard rings with offset field plate and junction terminal extension JTE. Simulation results show that this compound terminal structure can get higher breakdown voltage than guard rings with offset FP and also it is less sensitive to the doping concentration compared to single JTE when JTE is lightly doped.

KEYWORDS

4H-SiC; merged PiN-Schottky diode; junction terminal technique; junction terminal extension; offset field plate

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Author: Jian-hua Huang, Hong-liang Lv, Yu-ming Zhang, Yi-men Zhang, Xiao-yan Tang, Feng-ping Chen, Qing-wen Song

Source: http://www.scirp.org/



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