Synthesis and Characterization of S-Doped Black SiliconReport as inadecuate




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We present a new method to prepare the black silicon by plasma immersion ion implantation with low price and high efficiency. The black silicon was characterized by scanning electron microscopy SEM, auger electron spectroscopy AES and UV-VIS-NIR spectrophotometer. SEM results showed that the black silicon appeared porous structure. The formation mechanism of porous black silicon by plasma immersion ion implantation has been discussed by AES results. AES results showed that there were about 0.5 at.% sulfur in the silicon lattice. The average reflectance of black silicon was below 8% in the visible region.

KEYWORDS

plasma immersion ion implantation; black silicon; microstructure;reflectance

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Author: Bang-wu Liu, Jie Liu, Chao-bo Li, Yang Xia, Ming-gang Wang, Wen-dong Wang

Source: http://www.scirp.org/



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