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Abstract: Tunnel spin polarization in a piezoelectric AlGaN-GaN double barrierstructure is calculated. It is shown that the piezoelectric field and thespontaneous electrical polarization increase an efficiency of the tunnel spininjection. The relation between the electrical polarization and the spinorientation allows engineering a zero magnetic field spin injectionmanipulating the lattice-mismatch strain with an Al-content in the barriers.



Autor: V.I. Litvinov

Fuente: https://arxiv.org/







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