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BaTiO3 thin film has been deposited on Si100 substrate using sol-gel process and deposited by using spin – coating technique. The BaTiO3-Si100 structures were studied by structural and electrical characteristics. The X-ray diffrac-tion of BaTiO3-Si100 shows that the diffraction peaks become increasing sharp with increasing calcination tempera-tures indicating the enhance crystallinity of the films. Scanning electron microscopy of BaTiO3 thin films shows the crack free and uniform nature. The capacitance-voltage measurement of BaTiO3 thin film deposited on Si100 an-nealed at 600℃ shows large frequency dispersion in the accumulation region. The current-voltage measurement of BaTiO3-Si shows the ideality factor was approaches to unity at 600℃.

KEYWORDS

Sol-Gel Technique, BaTiO3 Thin Film, C-V, I-V

Cite this paper

V. Chinchamalatpure, S. Ghosh and G. Chaudhari -Synthesis and Electrical Characterization of BaTiO3 Thin Films on Si100,- Materials Sciences and Applications, Vol. 1 No. 4, 2010, pp. 187-190. doi: 10.4236-msa.2010.14029.





Autor: V. R. Chinchamalatpure, S. A. Ghosh, G. N. Chaudhari

Fuente: http://www.scirp.org/



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