Progress in Antimonide Based III-V Compound Semiconductors and DevicesReportar como inadecuado




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In recent years, the narrow bandgap antimonide based compound semiconductors ABCS are widely regarded as the first candidate materials for fabrication of the third generation infrared photon detectors and integrated circuits with ultra-high speed and ultra-low power consumption. Due to their unique bandgap structure and physical properties, it makes a vast space to develop various novel devices, and becomes a hot research area in many developed countries such as USA, Japan, Germany and Israel etc. Research progress in the preparation and application of ABCS materials, existing problems and some latest results are briefly introduced.

KEYWORDS

Antimonide Based Compound Semiconductors ABCS, IR Laser, IR Detector, Integrated Circuit, Functional Device

Cite this paper

C. Liu, Y. Li and Y. Zeng -Progress in Antimonide Based III-V Compound Semiconductors and Devices,- Engineering, Vol. 2 No. 8, 2010, pp. 617-624. doi: 10.4236-eng.2010.28079.





Autor: Chao Liu, Yanbo Li, Yiping Zeng

Fuente: http://www.scirp.org/



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