An influence of polyHEMA gate layer on properties of ChemFETsReportar como inadecuado




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Institute of Biocybernetics and Biomedical Engineering of the Polish Academy of Sciences, ul. Ks. Trojdena 4, 02-109 Warsaw, Poland





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Abstract A complex deposition procedure of the hydrogel layer of modified poly2-hydroxyethyl methacrylate polyHEMA covalently linked to the silicon nitride surface and covering only the gate area of the ISFET, was optimized for photolithographic technology, using standard silicon wafers of 3- diameter. The influence of hydrogel composition and layer thickness on the sensors’ parameters was investigated. It was shown, that ISFETs covered with more than 100 μm thick polyHEMA layers in restricted pH-range could be practically insensitive to pH. Regarding mechanical stability of ion-selective sensors, a polyHEMA layer of ca. 20 μm thickness was found to be the best suitable for further manufacturing of durable ion selective sensors Chemically modified Field-Effect Transistors – ChemFETs. The weak buffering properties of the thin polyHEMA layers had no disadvantageous influence on the sensors’ function.

Keywords: Ion-sensitive field-effect transistorISFET; Poly2-hydroxyethyl methacrylate; hydrogel buffering layer; Photolithography Ion-sensitive field-effect transistorISFET; Poly2-hydroxyethyl methacrylate; hydrogel buffering layer; Photolithography





Autor: Marek Dawgul *, Dorota G. Pijanowska, Alfred Krzyskow, Jerzy Kruk and Wladyslaw Torbicz

Fuente: http://mdpi.com/



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