Photoelectric phenomena in structures based on high-resistivity semiconductor crystals with a thin insulator layer at the semiconductor-metal boundary - Condensed Matter Materials ScienceReport as inadecuate




Photoelectric phenomena in structures based on high-resistivity semiconductor crystals with a thin insulator layer at the semiconductor-metal boundary - Condensed Matter Materials Science - Download this document for free, or read online. Document in PDF available to download.

Abstract: A previously unknown effect-giant spatial redistribution of the electricfield strength in a crystal under illumination of the structure - wasdiscovered and investigated in real photoresistors on high-resistivitysemi-insulating semiconductor CdTe crystals in metal-thin insulator-semiconductor-thin insulator -metal structures.A new concept is proposed for photoelectric phenomena in high- resistivitysemiconductor crystals. The concept is based on the idea that theredistribution of the field under such conditions that the carrier lifetimeremains unchanged under illumination plays a determining role in thesephenomena. The nature of the effect is described, the dependence of thecharacteristics of the structures on the parameters of the crystal and theinsulator layers is explained by the manifestation of this effect, and ways toproduce structures with prescribed photoelectric characteristics for newdevices and scientific methods are examined.



Author: P. G. Kasherininov, A. V. Kichaev, A. A. Tomasov

Source: https://arxiv.org/







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