Piezoresistive Sensitivity, Linearity and Resistance Time Drift of Polysilicon Nanofilms with Different Deposition TemperaturesReport as inadecuate




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1

MEMS Center, Harbin Institute of Technology, Harbin 150001, Heilongjiang Province, P.R. China

2

Key Laboratory of Micro-Systems and Micro-Structures Manufacturing, Ministry of Education, P.R. China

3

Information Science and Engineering School, Shenyang University of Technology, Shenyang, Liaoning Province, P.R. China





*

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Abstract Our previous research work indicated that highly boron doped polysilicon nanofilms ≤100 nm in thickness have higher gauge factor the maximum is ~34 for 80 nm-thick films and better temperature stability than common polysilicon films ≥ 200nm in thickness at the same doping levels. Therefore, in order to further analyze the influence of deposition temperature on the film structure and piezoresistance performance, the piezoresistive sensitivity, piezoresistive linearity PRL and resistance time drift RTD of 80 nm-thick highly boron doped polysilicon nanofilms PSNFs with different deposition temperatures were studied here. The tunneling piezoresistive model was established to explain the relationship between the measured gauge factors GFs and deposition temperature. It was seen that the piezoresistance coefficient PRC of composite grain boundaries is higher than that of grains and the magnitude of GF is dependent on the resistivity of grain boundary GB barriers and the weight of the resistivity of composite GBs in the film resistivity. In the investigations on PRL and RTD, the interstitial-vacancy IV model was established to model GBs as the accumulation of IV pairs. And the recrystallization of metastable IV pairs caused by material deformation or current excitation is considered as the prime reason for piezoresistive nonlinearity PRNL and RTD. Finally, the optimal deposition temperature for the improvement of film performance and reliability is about 620 °C and the high temperature annealing is not very effective in improving the piezoresistive performance of PSNFs deposited at lower temperatures. View Full-Text

Keywords: Polysilicon nanofilm; Piezoresistive effect; Linearity; Resistance time drift; Tunneling; Interstitial-vacancy pair; Deposition temperature Polysilicon nanofilm; Piezoresistive effect; Linearity; Resistance time drift; Tunneling; Interstitial-vacancy pair; Deposition temperature





Author: Changzhi Shi 1, 2,* , Xiaowei Liu 1, 2 and Rongyan Chuai 3

Source: http://mdpi.com/



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