Fabrication and Characterization of a Ruthenium Nitride Membrane for Electrochemical pH SensorsReportar como inadecuado




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1

Graduate School of Engineering Science and Technology, National Yunlin University of Science and Technology - 123, 3 sec. University, Douliou, Yunlin, Taiwan R.O.C.

2

Department of Information Management, Transworld of Institute of Technology - 1221, Jen-Nang Rd., Chia-Tong Li, Douliou, Yunlin, Taiwan R.O.C.

3

Graduate School of Electronic Engineering, National Yunlin University of Science and Technology- 123, 3 sec. University, Douliou, Yunlin, Taiwan R.O.C.





*

Author to whom correspondence should be addressed.



Abstract ThepH sensing and nonideal characteristics of a ruthenium nitride RuN sensing membrane pH sensor were investigated. RuN thin films were deposited from a 99.9% ruthenium target on p-type silicon substrates using radio frequency r.f. sputtering with N2 gas. Subsequently, the nanometric structure and surface morphology of RuN thin films were determined. The sensitivity of the RuN sensing membrane pH sensor was 58.03 mV-pH, obtained from ID-VG curves with a current-voltage I-V measurement system in standard buffer solutions from pH 1 to pH 13 at room temperature 25 °C. Moreover, the nonideal characteristics of the RuN sensing membrane, such as temperature coefficient, drift with light influence, drift rate and hysteresis width, etc. were also investigated. Finally, the sensing characteristics of the RuN membrane were compared with titanium nitride TiN, aluminum nitride AlN and silicon nitride Si3N4 membranes. View Full-Text

Keywords: Ruthenium nitride; ion selective electrode; temperature coefficient; light influence; drift rate; hysteresis width Ruthenium nitride; ion selective electrode; temperature coefficient; light influence; drift rate; hysteresis width





Autor: Yi-Hung Liao 1, 2 and Jung-Chuan Chou 1, 3,*

Fuente: http://mdpi.com/



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