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INAF-IASF Palermo, Via Ugo La Malfa 153, 90146 Palermo, Italy

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Dipartimento di Fisica e Tecnologie Relative, Università di Palermo,Viale delle Scienze, 90128 Palermo, Italy

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INAF-IASF Bologna, Via Gobetti 101, 40129 Bologna, Italy

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Dipartimento di Ingegneria dell’Innovazione, Università del Salento, Via Arnesano, 73100 Lecce, Italy

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IMEM-CNR, Parco Area delle Scienze 37-A, 43100 Parma, Italy

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INAF-IASF Roma, Via del Fosso del Cavaliere 100, 00133 Roma, Italy





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Authors to whom correspondence should be addressed.



Abstract Over the last decade, cadmium telluride CdTe and cadmium zinc telluride CdZnTe wide band gap semiconductors have attracted increasing interest as X-ray and gamma ray detectors. Among the traditional high performance spectrometers based on silicon Si and germanium Ge, CdTe and CdZnTe detectors show high detection efficiency and good room temperature performance and are well suited for the development of compact and reliable detection systems. In this paper, we review the current status of research in the development of CdTe and CdZnTe detectors by a comprehensive survey on the material properties, the device characteristics, the different techniques for improving the overall detector performance and some major applications. Astrophysical and medical applications are discussed, pointing out the ongoing Italian research activities on the development of these detectors. View Full-Text

Keywords: compound semiconductors; CdTe and CdZnTe detectors; X-ray and gamma ray spectroscopy compound semiconductors; CdTe and CdZnTe detectors; X-ray and gamma ray spectroscopy





Autor: Stefano Del Sordo 1,* , Leonardo Abbene 1, 2,* , Ezio Caroli 3, Anna Maria Mancini 4, Andrea Zappettini 5 and Pietro Ubertini 6

Fuente: http://mdpi.com/



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