A High Isolation Series-Shunt RF MEMS SwitchReportar como inadecuado




A High Isolation Series-Shunt RF MEMS Switch - Descarga este documento en PDF. Documentación en PDF para descargar gratis. Disponible también para leer online.

1

Department of Physics, Nanjing University, Nanjing, 210093, China

2

National Key Lab. of Monolithic Integrated Circuits and Modules, Nanjing, 210016, China

3

Nanjing Electronic Devices Institute, Nanjing, China





*

Author to whom correspondence should be addressed.



Abstract This paper presents a wide band compact high isolation microelectromechanical systems MEMS switch implemented on a coplanar waveguide CPW with three ohmic switch cells, which is based on the series-shunt switch design. The ohmic switch shows a low intrinsic loss of 0.1 dB and an isolation of 24.8 dB at 6 GHz. The measured average pull-in voltage is 28 V and switching time is 47 µs. In order to shorten design period of the high isolation switch, a structure-based small-signal model for the 3-port ohmic MEMS switch is developed and parameters are extracted from the measured results. Then a high isolation switch has been developed where each 3-port ohmic MEMS switch is closely located. The agreement of the measured and modeled radio frequency RF performance demonstrates the validity of the electrical equivalent model. Measurements of the series-shunt switch indicate an outstanding isolation of more than 40 dB and a low insertion loss of 0.35 dB from DC to 12 GHz with total chip size of 1 mm × 1.2 mm. View Full-Text

Keywords: series-shunt; RF MEMS switch; metal-contact; electrical model series-shunt; RF MEMS switch; metal-contact; electrical model





Autor: Yuan-Wei Yu 1,2,3,* , Jian Zhu 2,3, Shi-Xing Jia 3 and Yi Shi 1

Fuente: http://mdpi.com/



DESCARGAR PDF




Documentos relacionados