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Department of Mechanical Engineering, National Chung Hsing University, Taichung, 402 Taiwan


Department of Mechanical and Electro-Mechanical Engineering, Tamkang University, Tamsui, 251 Taiwan


Corporate R&D Headquarters, Canon Inc., Tokyo 146-8501, Japan


Author to whom correspondence should be addressed.

Abstract In this study, we fabricated a wireless micro FET field effect transistor pressure sensor based on the commercial CMOS complementary metal oxide semiconductor process and a post-process. The wireless micro pressure sensor is composed of a FET pressure sensor, an oscillator, an amplifier and an antenna. The oscillator is adopted to generate an ac signal, and the amplifier is used to amplify the sensing signal of the pressure sensor. The antenna is utilized to transmit the output voltage of the pressure sensor to a receiver. The pressure sensor is constructed by 16 sensing cells in parallel. Each sensing cell contains an MOS metal oxide semiconductor and a suspended membrane, which the gate of the MOS is the suspended membrane. The postprocess employs etchants to etch the sacrificial layers in the pressure sensor for releasing the suspended membranes, and a LPCVD low pressure chemical vapor deposition parylene is adopted to seal the etch holes in the pressure. Experimental results show that the pressure sensor has a sensitivity of 0.08 mV-kPa in the pressure range of 0–500 kPa and a wireless transmission distance of 10 cm. View Full-Text

Keywords: wireless micro pressure sensor; CMOS-MEMS; oscillators wireless micro pressure sensor; CMOS-MEMS; oscillators

Autor: Ching-Liang Dai 1,* , Po-Wei Lu 1, Chyan-Chyi Wu 2 and Chienliu Chang 3

Fuente: http://mdpi.com/


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