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STI-IEL-Electronics Laboratory, Ecole Polytechnique Fédérale de Lausanne EPFL, CH-1015 Lausanne, Switzerland





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Abstract Five different Hall Effect sensors were modeled and their performance evaluated using a three dimensional simulator. The physical structure of the implemented sensors reproduces a certain technological fabrication process. Hall voltage, absolute, current-related, voltage-related and power-related sensitivities were obtained for each sensor. The effect of artificial offset was also investigated for cross-like structures. The simulation procedure guides the designer in choosing the Hall cell optimum shape, dimensions and device polarization conditions that would allow the highest performance. View Full-Text

Keywords: Hall Effect sensor design; offset; sensitivity; device polarization; 3D physical simulations Hall Effect sensor design; offset; sensitivity; device polarization; 3D physical simulations





Autor: Maria-Alexandra Paun * , Jean-Michel Sallese and Maher Kayal

Fuente: http://mdpi.com/



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