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1

School of Electronic Science and Technology, Faculty of Electronic Information and Electronic Engineering, Dalian University of Technology, Dalian 116024, China

2

Institute of New Electron Devices, Hangzhou Dianzi University, Hangzhou 310018, China

3

College of Electronic Science & Engineering, Nanjing University of Posts and Telecommunications, Nanjing 210003, China





*

Authors to whom correspondence should be addressed.



Academic Editor: Vittorio M. N. Passaro

Abstract This paper presents a fully integrated linear Hall sensor by means of 0.8 μm high voltage complementary metal-oxide semiconductor CMOS technology. This monolithic Hall sensor chip features a highly sensitive horizontal switched Hall plate and an efficient signal conditioner using dynamic offset cancellation technique. An improved cross-like Hall plate achieves high magnetic sensitivity and low offset. A new spinning current modulator stabilizes the quiescent output voltage and improves the reliability of the signal conditioner. The tested results show that at the 5 V supply voltage, the maximum Hall output voltage of the monolithic Hall sensor microsystem, is up to ±2.1 V and the linearity of Hall output voltage is higher than 99% in the magnetic flux density range from ±5 mT to ±175 mT. The output equivalent residual offset is 0.48 mT and the static power consumption is 20 mW. View Full-Text

Keywords: monolithic Hall sensor; sensitivity and linearity; Hall offset; dynamic offset cancellation technique monolithic Hall sensor; sensitivity and linearity; Hall offset; dynamic offset cancellation technique





Autor: Haiyun Huang 1,2,* , Dejun Wang 1,* and Yue Xu 3

Fuente: http://mdpi.com/



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