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Thayer School of Engineering, Dartmouth College, 14 Engineering Drive, Hanover, NH 03755, USA





Abstract Monolithically integrated, active photonic devices on Si are key components in Si-based large-scale electronic-photonic integration for future generations of high-performance, low-power computation and communication systems. Ge has become an interesting candidate for active photonic devices in Si photonics due to its pseudo-direct gap behavior and compatibility with Si complementary metal oxide semiconductor CMOS processing. In this paper, we present a review of the recent progress in Ge-on-Si active photonics materials and devices for photon detection, modulation, and generation. We first discuss the band engineering of Ge using tensile strain, n-type doping, Sn alloying, and separate confinement of Γ vs. L electrons in quantum well QW structures to transform the material towards a direct band gap semiconductor for enhancing optoelectronic properties. We then give a brief overview of epitaxial Ge-on-Si materials growth, followed by a summary of recent investigations towards low-temperature, direct growth of high crystallinity Ge and GeSn alloys on dielectric layers for 3D photonic integration. Finally, we review the most recent studies on waveguide-integrated Ge-on-Si photodetectors PDs, electroabsorption modulators EAMs, and laser diodes LDs, and suggest possible future research directions for large-scale monolithic electronic-photonic integrated circuits on a Si platform. View Full-Text

Keywords: Ge; GeSi; GeSn; tensile strain; band engineering; integrated silicon photonics; optoelectronics; photodetectors; modulators; lasers Ge; GeSi; GeSn; tensile strain; band engineering; integrated silicon photonics; optoelectronics; photodetectors; modulators; lasers





Autor: Jifeng Liu

Fuente: http://mdpi.com/



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