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Institute of Semiconductors, Chinese Academy of Sciences, Beijing 100083, China

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State Key Laboratory of Transducer Technology, Chinese Academy of Sciences, Beijing 100083, China





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Author to whom correspondence should be addressed.



Academic Editor: Meiling Zhu

Abstract In this paper, the piezoelectric coefficient d33 of AlN thin films for MEMS applications was studied by the piezoresponse force microscopy PFM measurement and finite element method FEM simulation. Both the sample without a top electrode and another with a top electrode were measured by PFM to characterize the piezoelectric property effectively. To obtain the numerical solution, an equivalent model of the PFM measurement system was established based on theoretical analysis. The simulation results for two samples revealed the effective measurement value d33-test should be smaller than the intrinsic value d33 due to the clamping effect of the substrate and non-ideal electric field distribution. Their influences to the measurement results were studied systematically. By comparing the experimental results with the simulation results, an experimental model linking the actual piezoelectric coefficient d33 with the measurement results d33-test was given under this testing configuration. A novel and effective approach was presented to eliminate the influences of substrate clamping and non-ideal electric field distribution and extract the actual value d33 of AlN thin films. View Full-Text

Keywords: aluminum nitride; MEMS; finite element method; piezoresponse force microscopy; piezoelectric coefficient aluminum nitride; MEMS; finite element method; piezoresponse force microscopy; piezoelectric coefficient





Autor: Meng Zhang 1, Jian Yang 1, Chaowei Si 1, Guowei Han 1, Yongmei Zhao 1,2 and Jin Ning 1,2,*

Fuente: http://mdpi.com/



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