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State Key Laboratory of Robotics, Shenyang Institute of Automation, Chinese Academy of Sciences, 114 Nanta Str., Shenhe Dist., Shenyang 110016, China


University of Chinese Academy of Sciences, No.19A Yuquan Road, Beijing 100049, China


Department of Mechanical Engineering, University of Arkansas, 204 Mechanical Engineering Building, Fayetteville, AR 72701, USA

This paper is an extended version of our paper published in the 10th IEEE International Conference on Nano-Micro Engineered and Molecular Systems, Xi’an, China, 7–11 April 2015.


Authors to whom correspondence should be addressed.

Academic Editors: Ting-Hsuan Chen and Joost Lötters

Abstract Graphene and single-walled carbon nanotube SWCNT have been widely studied because of their extraordinary electrical, thermal, mechanical, and optical properties. This paper describes a novel and flexible method to fabricate all-carbon field-effect transistors FETs. The fabrication process begins with assembling graphene grown by chemical vapor deposition CVD on a silicon chip with SiO2 as the dielectric layer and n-doped Si substrate as the gate. Next, an atomic force microscopy AFM-based mechanical cutting method is utilized to cut the graphene into interdigitated electrodes with nanogaps, which serve as the source and drain. Lastly, SWCNTs are assembled on the graphene interdigitated electrodes by dielectrophoresis to form the conductive channel. The electrical properties of the thus-fabricated SWCNT-graphene FETs are investigated and their FET behavior is confirmed. The current method effectively integrates SWCNTs and graphene in nanoelectronic devices, and presents a new method to build all-carbon electronic devices. View Full-Text

Keywords: graphene; SWCNT; all-carbon; FETs; dielectrophoresis; AFM; interdigitated electrodes graphene; SWCNT; all-carbon; FETs; dielectrophoresis; AFM; interdigitated electrodes

Autor: Shuangxi Xie 1,2, Niandong Jiao 1, Steve Tung 1,3,* and Lianqing Liu 1,*

Fuente: http://mdpi.com/


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