Microstructure Evolution and High-Temperature Compressibility of Modified Two-Step Strain-Induced Melt Activation-Processed Al-Mg-Si Aluminum AlloyReportar como inadecuado




Microstructure Evolution and High-Temperature Compressibility of Modified Two-Step Strain-Induced Melt Activation-Processed Al-Mg-Si Aluminum Alloy - Descarga este documento en PDF. Documentación en PDF para descargar gratis. Disponible también para leer online.

Department of Materials Science and Engineering, National Cheng Kung University, Tainan 701, Taiwan





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Academic Editor: Soran Birosca

Abstract A two-step strain-induced melt activation TS-SIMA process that omits the cold working step of the traditional strain-induced melt activation SIMA process is proposed for 6066 Al-Mg-Si alloy to obtain fine, globular, and uniform grains with a short-duration salt bath. The results show that increasing the salt bath temperature and duration leads to a high liquid phase fraction and a high degree of spheroidization. However, an excessive salt bath temperature leads to rapid grain growth and generates melting voids. The initial degree of dynamic recrystallization, which depends on the extrusion ratio, affects the globular grain size. With an increasing extrusion ratio, the dynamic recrystallization becomes more severe and the dynamic recrystallized grain size becomes smaller. It results in the globular grains becomes smaller. The major growth mechanism of globular grains is Ostwald ripening. Furthermore, high-temperature compressibility can be improved by the TS-SIMA process. After a 4 min salt bath at 620 °C, the high-temperature compression ratio become higher than that of a fully annealed alloy. The results show that the proposed TS-SIMA process has great potential. View Full-Text

Keywords: aluminum alloy; strain-induced melting activation SIMA; semi-solid metal processing; high-temperature compression aluminum alloy; strain-induced melting activation SIMA; semi-solid metal processing; high-temperature compression





Autor: Chia-Wei Lin, Fei-Yi Hung * , Truan-Sheng Lui and Li-Hui Chen

Fuente: http://mdpi.com/



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