Ti-doped ZnO Thin Films Prepared at Different Ambient Conditions: Electronic Structures and Magnetic PropertiesReportar como inadecuado


Ti-doped ZnO Thin Films Prepared at Different Ambient Conditions: Electronic Structures and Magnetic Properties


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1

Physics Department, Faculty of Science, National University of Singapore, 117542, Singapore

2

Institute for Synchrotron Radiation, Karlsruhe Institute of Technology, 76344, Germany

3

SPring-8-JASRI, Hyogo, 679-5198, Japan

4

NanoCore, National University of Singapore, 117576, Singapore

5

Singapore Synchrotron Light Source, National University of Singapore, 117603, Singapore





*

Author to whom correspondence should be addressed.



Abstract We present a comprehensive study on Ti-doped ZnO thin films using X-ray Absorption Fine Structure XAFS spectroscopy. Ti K edge XAFS spectra were measured to study the electronic and chemical properties of Ti ions in the thin films grown under different ambient atmospheres. A strong dependence of Ti speciation, composition, and local structures upon the ambient conditions was observed. The XAFS results suggest a major tetrahedral coordination and a 4+ valence state. The sample grown in a mixture of 80% Ar and 20% O2 shows a portion of precipitates with higher coordination. A large distortion was observed by the Ti substitution in the ZnO lattice. Interestingly, the film prepared in 80% Ar, 20% O2 shows the largest saturation magnetic moment of 0.827 ± 0.013 µB-Ti. View Full-Text

Keywords: DMS; XAFS; ZnO; vacancy; Ti DMS; XAFS; ZnO; vacancy; Ti





Autor: Zhihua Yong 1,4, Tao Liu 1,2,* , Tomoya Uruga 3, Hajime Tanida 3, Dongchen Qi 1,4, Andrivo Rusydi 1,4,5 and Andrew T. S. Wee 1

Fuente: http://mdpi.com/



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