Recent Progress of Ferroelectric-Gate Field-Effect Transistors and Applications to Nonvolatile Logic and FeNAND Flash MemoryReportar como inadecuado


Recent Progress of Ferroelectric-Gate Field-Effect Transistors and Applications to Nonvolatile Logic and FeNAND Flash Memory


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National Institute of Advanced Industrial Science and Technology - Central 2, 1-1-1 Umezono, Tsukuba, Ibaraki 305-8568, Japan





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Abstract We have investigated ferroelectric-gate field-effect transistors FeFETs with Pt-SrBi2Ta2O9-HfO2xAl2O31−x Hf-Al-O and Pt-SrBi2Ta2O9-HfO2 gate stacks. The fabricated FeFETs have excellent data retention characteristics: The drain current ratio between the on- and off-states of a FeFET was more than 2 × 106 after 12 days, and the decreasing rate of this ratio was so small that the extrapolated drain current ratio after 10 years is larger than 1 × 105. A fabricated self-aligned gate Pt-SrBi2Ta2O9-Hf-Al-O-Si FET revealed a sufficiently large drain current ratio of 2.4 × 105 after 33.5 day, which is 6.5 × 104 after 10 years by extrapolation. The developed FeFETs also revealed stable retention characteristics at an elevated temperature up to 120 °C and had small transistor threshold voltage Vth distribution. The Vth can be adjusted by controlling channel impurity densities for both n-channel and p-channel FeFETs. These performances are now suitable to integrated circuit application with nonvolatile functions. Fundamental properties for the applications to ferroelectric-CMOS nonvolatile logic-circuits and to ferroelectric-NAND flash memories are demonstrated. View Full-Text

Keywords: FeFET; semiconductor memory; nonvolatile memory; nonvolatile logic FeFET; semiconductor memory; nonvolatile memory; nonvolatile logic





Autor: Shigeki Sakai * and Mitsue Takahashi

Fuente: http://mdpi.com/



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