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Alphasense, Inc., 510 Philadelphia Pike, Wilmington, DE 19809, USA

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Department of Electrical and Computer Engineering, University of Delaware, 140 Evans Hall, Newark, DE 19716, USA

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Department of Materials Science and Engineering, University of Delaware, 201 DuPont Hall, Newark, DE 19716, USA

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Technologie Supérieure, 1100 rue Notre-Dame Ouest, Montréal, QC H3C 0J9, Canada





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Academic Editor: Dirk Poelman

Abstract The engineering of quantum dot solids with low defect concentrations and efficient carrier transport through a ligand strategy is crucial to achieve efficient quantum dot QD optoelectronic devices. Here, we study the consequences of various surface ligand treatments on the light emission properties of PbS quantum dot films using 1,3-benzenedithiol 1,3-BDT, 1,2-ethanedithiol EDT, mercaptocarboxylic acids MPA and ammonium sulfide NH42S. We first investigate the influence of different ligand treatments on the inter-dot separation, which mainly determines the conductivity of the QD films. Then, through a combination of photoluminescence and transient photoluminescence characterization, we demonstrate that the radiative and non-radiative recombination mechanisms in the quantum dot films depend critically on the length and chemical structure of the surface ligands. View Full-Text

Keywords: quantum dots; PbS; lead chalcogenide; surface ligand; EDT; 1,3-BDT; MPA; ammonium sulfide; photo-luminescence quantum dots; PbS; lead chalcogenide; surface ligand; EDT; 1,3-BDT; MPA; ammonium sulfide; photo-luminescence





Autor: Fan Xu 1,2, Luis Felipe Gerlein 4, Xin Ma 2, Chelsea R. Haughn 3, Matthew F. Doty 3 and Sylvain G. Cloutier 2,4,*

Fuente: http://mdpi.com/



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