Crystal Quality and Light Output Power of GaN-Based LEDs Grown on Concave Patterned Sapphire SubstrateReportar como inadecuado




Crystal Quality and Light Output Power of GaN-Based LEDs Grown on Concave Patterned Sapphire Substrate - Descarga este documento en PDF. Documentación en PDF para descargar gratis. Disponible también para leer online.

Department of Materials Science and Engineering, National Chiao Tung University, 1001 University Road, Hsinchu 300, Taiwan





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Academic Editor: Dirk Poelman

Abstract The crystal quality and light output power of GaN-based light-emitting diodes LEDs grown on concave patterned sapphire substrate CPSS were investigated. It was found that the crystal quality of GaN-based LEDs grown on CPSS improved with the decrease of the pattern space percentage of c-plane. However, when the pattern space decreased to 0.41 μm S0.41-GaN, the GaN crystallinity dropped. On the other hand, the light output power of GaN-based LEDs was increased with the decrease of the pattern space due to the change of the light extraction efficiency. View Full-Text

Keywords: GaN-based LED; concave patterned sapphire substrate; crystal quality; light output power GaN-based LED; concave patterned sapphire substrate; crystal quality; light output power





Autor: YewChung Sermon Wu * , A. Panimaya Selvi Isabel, Jian-Hsuan Zheng, Bo-Wen Lin, Jhen-Hong Li and Chia-Chen Lin

Fuente: http://mdpi.com/



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