Reduced Subthreshold Characteristics and Flicker Noise of an AlGaAs-InGaAs PHEMT Using Liquid Phase Deposited TiO2 as a Gate DielectricReportar como inadecuado


Reduced Subthreshold Characteristics and Flicker Noise of an AlGaAs-InGaAs PHEMT Using Liquid Phase Deposited TiO2 as a Gate Dielectric


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1

Department of Electronic Engineering, I-Shou University, Kaohsiung 840, Taiwan

2

Department of Electrical Engineering, Institute of Microelectronics, National Cheng-Kung University, Tainan 701, Taiwan





*

Author to whom correspondence should be addressed.



Academic Editor: Lanxia Cheng

Abstract This study presents the fabrication and improved properties of an AlGaAs-InGaAs metal-oxide-semiconductor pseudomorphic high-electron-mobility transistor MOS-PHEMT using liquid phase deposited titanium dioxide LPD-TiO2 as a gate dielectric. Sulfur pretreatment and postoxidation rapid thermal annealing RTA were consecutively employed before and after the gate dielectric was deposited to fill dangling bonds and therefore release interface trapped charges. Compared with a benchmark PHEMT, the AlGaAs-InGaAs MOS-PHEMT using LPD-TiO2 exhibited larger gate bias operation, higher breakdown voltage, suppressed subthreshold characteristics, and reduced flicker noise. As a result, the device with proposed process and using LPD-TiO2 as a gate dielectric is promising for high-speed applications that demand little noise at low frequencies. View Full-Text

Keywords: AlGaAs; pseudomorphic high-electron-mobility transistor PHEMT; TiO2; flicker noise AlGaAs; pseudomorphic high-electron-mobility transistor PHEMT; TiO2; flicker noise





Autor: Kai-Yuen Lam 1, Jung-Sheng Huang 1, Yong-Jie Zou 1, Kuan-Wei Lee 1,* and Yeong-Her Wang 2

Fuente: http://mdpi.com/



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