Voltage-controlled tunneling anisotropic magneto-resistance of a ferromagnetic $p^{ }$-Ga,MnAs-$n^{ }$-GaAs Zener-Esaki diodeReportar como inadecuado



 Voltage-controlled tunneling anisotropic magneto-resistance of a ferromagnetic $p^{  }$-Ga,MnAs-$n^{ }$-GaAs Zener-Esaki diode


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The large tunneling anisotropic magneto-resistance of a single $p^{++}$-Ga,MnAs-$n^{+}$-GaAs Zener-Esaki diode is evidenced in a perpendicular magnetic field over a large temperature and voltage range. Under an applied bias, the tunnel junction transparency is modified, allowing to continuously tune anisotropic transport properties between the tunneling and the ohmic regimes. Furthermore, an asymmetric bias-dependence of the anisotropic tunneling magneto-resistance is also observed: a reverse bias highlights the full Ga,MnAs valence band states contribution, whereas a forward bias only probes part of the density of states and reveals opposite contributions from two subbands.



Autor: R. Giraud; M. Gryglas; L. Thevenard; A. Lemaître; G. Faini

Fuente: https://archive.org/



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