Unconventional ferromagnetism and transport properties of In,MnSb dilute magnetic semiconductorReportar como inadecuado



 Unconventional ferromagnetism and transport properties of In,MnSb dilute magnetic semiconductor


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Narrow-gap higher mobility semiconducting alloys In {1-x}Mn {x}Sb were synthesized in polycrystalline form and their magnetic and transport properties have been investigated. Ferromagnetic response in In {0.98}Mn {0.02}Sb was detected by the observation of clear hysteresis loops up to room temperature in direct magnetization measurements. An unconventional reentrant magnetization versus temperature behavior has been found. We explained the observed peculiarities within the frameworks of recent models which suggest that a strong temperature dependence of the carrier density is a crucial parameter determining carrier-mediated ferromagnetism of III,MnV semiconductors. The correlation between magnetic states and transport properties of the sample has been discussed. The contact spectroscopy method is used to investigate a band structure of InMnSb near the Fermi level. Measurements of the degree of charge current spin polarization have been carried out using the point contact Andreev reflection AR spectroscopy. The AR data are analyzed by introducing a quasiparticle spectrum broadening, which is likely to be related to magnetic scattering in the contact. The AR spectroscopy data argued that at low temperature the sample is decomposed on metallic ferromagnetic clusters with relatively high spin polarization of charge carriers up to 65% at 4.2K within a cluster.



Autor: V. N. Krivoruchko; V. Yu. Tarenkov; D. V. Varyukhin; A. I. D'yachenko; O. N. Pashkova; V. A. Ivanov

Fuente: https://archive.org/







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