Vol 4: Study of Multi-level Characteristics for 3D Vertical Resistive Switching Memory.Reportar como inadecuado



 Vol 4: Study of Multi-level Characteristics for 3D Vertical Resistive Switching Memory.


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This article is from Scientific Reports, volume 4.AbstractThree-dimensional 3D integration and multi-level cell MLC are two attractive technologies to achieve ultra-high density for mass storage applications. In this work, a three-layer 3D vertical AlOδ-Ta2O5-x-TaOy resistive random access memories were fabricated and characterized. The vertical cells in three layers show good uniformity and high performance e.g. 1000X HRS-LRS windows, 1010 endurance cycles, 104 s retention times at 125°C. Meanwhile, four level MLC is demonstrated with two operation strategies, current controlled scheme CCS and voltage controlled scheme VCS. The switching mechanism of 3D vertical RRAM cells is studied based on temperature-dependent transport characteristics. Furthermore, the applicability of CCS and VCS in 3D vertical RRAM array is compared using resistor network circuit simulation.



Autor: Bai, Yue; Wu, Huaqiang; Wu, Riga; Zhang, Ye; Deng, Ning; Yu, Zhiping; Qian, He

Fuente: https://archive.org/







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