Vol 8: Low-temperature synthesis of graphene on Cu using plasma-assisted thermal chemical vapor deposition.Report as inadecuate



 Vol 8: Low-temperature synthesis of graphene on Cu using plasma-assisted thermal chemical vapor deposition.


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This article is from Nanoscale Research Letters, volume 8.AbstractPlasma-assisted thermal chemical vapor deposition CVD was carried out to synthesize high-quality graphene film at a low temperature of 600°C. Monolayer graphene films were thus synthesized on Cu foil using various ratios of hydrogen and methane in a gaseous mixture. The in situ plasma emission spectrum was measured to elucidate the mechanism of graphene growth in a plasma-assisted thermal CVD system. According to this process, a distance must be maintained between the plasma initial stage and the deposition stage to allow the plasma to diffuse to the substrate. Raman spectra revealed that a higher hydrogen concentration promoted the synthesis of a high-quality graphene film. The results demonstrate that plasma-assisted thermal CVD is a low-cost and effective way to synthesis high-quality graphene films at low temperature for graphene-based applications.



Author: Chan, Shih-Hao; Chen, Sheng-Hui; Lin, Wei-Ting; Li, Meng-Chi; Lin, Yung-Chang; Kuo, Chien-Cheng

Source: https://archive.org/







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