Characterization and optimization of the laser-produced plasma EUV source at 13.5 nm based on a double-stream Xe-He gas puff targetReportar como inadecuado




Characterization and optimization of the laser-produced plasma EUV source at 13.5 nm based on a double-stream Xe-He gas puff target - Descarga este documento en PDF. Documentación en PDF para descargar gratis. Disponible también para leer online.

Applied Physics B

, Volume 101, Issue 4, pp 773–789

First Online: 23 November 2010Received: 23 February 2010Revised: 02 November 2010

Abstract

The paper describes a debris-free, efficient laser-produced plasma source emitting EUV radiation. The source is based on a double-stream Xe-He gas-puff. Its properties and spectroscopic signatures are characterized and discussed. The spatio-spectral features of the EUV emission are investigated. We show a large body of results related to the intensity and brightness of the EUV emission, its spatial, temporal, and angular behavior and the effect of the repetition rate as well. A conversion efficiency of laser energy into EUV in-band energy at 13.5 nm of 0.42% has been gained. The electron temperature and electron density of the source were estimated by means of a novel method using the FLY code. The experimental data and the Hullac code calculations are compared and discussed. The source is well suited for EUV metrology purposes. The potential of the source for application in EUV lithography was earlier demonstrated in the optical characterization of Mo-Si multi-layer mirrors and photo-etching of polymers.

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Autor: R. Rakowski - A. Bartnik - H. Fiedorowicz - F. de Gaufridy de Dortan - R. Jarocki - J. Kostecki - J. Mikołajczyk - L. Ry

Fuente: https://link.springer.com/







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