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Nanoscale Research Letters

, 3:179

First Online: 28 May 2008Received: 11 March 2008Accepted: 05 May 2008

Abstract

Deep level transient spectroscopy DLTS for investigating electronic properties of self-assembled InAs-GaAs quantum dots QDs is described in an approach, where experimental and theoretical DLTS data are compared in a temperature-voltage representation. From such comparative studies, the main mechanisms of electron escape from QD-related levels in tunneling and more complex thermal processes are discovered. Measurement conditions for proper characterization of the levels by identifying thermal and tunneling processes are discussed in terms of the complexity resulting from the features of self-assembled QDs and multiple paths for electron escape.

KeywordsElectron states in low-dimensional structures Quantum dots III–V semiconductors Electrical properties Deep level transient spectroscopy  Download fulltext PDF



Autor: O Engström - M Kaniewska

Fuente: https://link.springer.com/







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