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Abstract: Large-area graphene is a new material with properties that make it desirablefor advanced scaled electronic devices1. Recently, chemical vapor depositionCVD of graphene and few-layer graphene using hydrocarbons on metal substratessuch as Ni and Cu has shown to be a promising technique2-5. It has beenproposed in recent publications that graphene growth on Ni occurs by Csegregation2 or precipitation3, while that on Cu is by surface adsorption5. Inthis letter, we used a carbon isotope labeling technique to elucidate thegrowth kinetics and unambiguously demonstrate that graphene growth on Cu is bysurface adsorption whereas on Ni is by segregation-precipitation. Anunderstanding of the evolution of graphene growth and thus growth mechanismsis desired to obtain uniform graphene films. The results presented in thisletter clearly demonstrate that surface adsorption is preferred overprecipitation to grow graphene because it is a self-limiting process and thusmanufacturable.



Autor: Xuesong Li, Weiwei Cai, Luigi Colombo, Rodney S. Ruoff

Fuente: https://arxiv.org/



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