SiC Nanowires Synthesized by Rapidly Heating a Mixture of SiO and Arc-Discharge Plasma Pretreated Carbon BlackReportar como inadecuado




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Nanoscale Research Letters

, 4:153

First Online: 22 November 2008Received: 17 September 2008Accepted: 11 November 2008

Abstract

SiC nanowires have been synthesized at 1,600 °C by using a simple and low-cost method in a high-frequency induction furnace. The commercial SiO powder and the arc-discharge plasma pretreated carbon black were mixed and used as the source materials. The heating-up and reaction time is less than half an hour. It was found that most of the nanowires have core-shell SiC-SiO2nanostructures. The nucleation, precipitation, and growth processes were discussed in terms of the oxide-assisted cluster-solid mechanism.

KeywordsSilicon carbide Nanowires Induction heating  Download fulltext PDF



Autor: Feng-Lei Wang - Li-Ying Zhang - Ya-Fei Zhang

Fuente: https://link.springer.com/







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