The Influence of a Continuum Background on Carrier Relaxation in InAs-InGaAs Quantum DotReportar como inadecuado




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Nanoscale Research Letters

, 2:509

First Online: 13 September 2007Received: 11 May 2007Accepted: 27 August 2007

Abstract

We have investigated the ultra-fast carrier dynamics in Molecular Beam Epitaxy MBE-grown InAs-InGaAs-GaAs quantum dots QDs emitting at 1.3 μm by time resolved photoluminescence TRPL upconversion measurements with a time resolution of about 200 fs. Changing the detection energies in the spectral region from the energy of the quantum dots excitonic transition up to the barrier layer absorption edge, we have found that, under high excitation intensity, the intrinsic electronic states are populated mainly by carriers directly captured from the barrier.

KeywordsUltra fast spectroscopy Carrier relaxation Quantum dots  Download fulltext PDF



Autor: Gabriele Rainò - Giuseppe Visimberga - Abdelmajid Salhi - Maria T Todaro - Massimo De Vittorio - Adriana Passaseo - Robert

Fuente: https://link.springer.com/







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